Towards a Robust Framework for Analyzing Random Telegraph Signals (RTS): Application to 2-level RTS in a Semiconductor Quantum Dot

Abstract

This thesis proposes a multi-stage, robust framework for analyzing Random Telegraph Signals (RTS), characterized by temporal fluctuations, within semiconductor research. The framework is tailored to applications across nanoscale solid-state technologies and addresses the growing need for precise and scalable RTS analysis as quantum and semiconductor technologies progress. Beyond the commonly used pulse-based measurements, this work focuses on extracting insights from steady-state measurements, enabling the study of non-equilibrium states—a critical aspect of understanding semiconductor phenomena. Specifically, the framework meets the demand of mitigating noise at high resolutions, as well as future support of real-time monitoring, and enabling automated tuning in devices such as quantum dots (QDs) and some nanoscale CMOS devices where RTS arises from single-carrier actions. Through stages of pre-processing, denoising, digitization and mean dwell time extraction, this method supports high-resolution analysis of RTS, addressing the complexities of experimental semiconductor data.

The framework is validated with the real-world data of a specific QD holding 2-level RTS, demonstrating a robust 20-fold resolution increase, achieving a time bin reduction from 2 μs to 100 ns, with further explorations reaching 50 ns. This enhanced resolution uncovers hidden patterns within RTS. By accurately characterizing tunneling rates and transition dynamics, this research yields insights critical for high-fidelity quantum devices, potentially impacting applications like field-programmable gate arrays (FPGAs) and superconducting qubits, where RTS influences operational stability and performance.

Beyond immediate applications, this thesis establishes a flexible RTS processing platform adaptable across various nanoscale semiconductor technologies. Future work will explore broader integration of theoretical and experimental insights to further enhance this framework, creating a versatile toolset aimed at improving robustness and adaptability in semiconductor and quantum devices operating in environments with complex noise and temporal fluctuations.